CLF1G0035(S)-50:宽带RF功率GaN HEMT

CLF1G0035-50和CLF1G0035S-50是宽带通用50 W放大器,采用了恩智浦的第1代GaN HEMT技术。工作频率为DC至3.5 GHz。

特性和优势
    • 工作频率为DC至3.5 GHz
    • 50 W通用宽带RF功率GaN HEMT
    • 极佳的强度(VSWR 10 : 1)
    • 高电压操作(50 V)
    • 热增强封装
应用
    • 商业无线基础设施(蜂窝、WiMAX)
    • 雷达
    • 宽带通用放大器
    • 公共移动无线电
    • 工业、科学、医疗
    • 干扰器
    • EMC测试
    • 国防应用
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
CLF1G0035-50SOT467C0350050504913Pulsed RF; Pulsed RFProduction
CLF1G0035S-50SOT467B0350050504913Pulsed RF; Pulsed RFDevelopment
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
CLF1G0035-50

(SOT467C)
sot467c_poBulk Pack量产Standard MarkingCLF1G0035-50,112( 9340 664 11112 )
CLF1G0035S-50

(SOT467B)
sot467b_poBulk Pack开发中Standard MarkingCLF1G0035S-50,112( 9340 664 12112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
CLF1G0035-50CLF1G0035-50,112Always Pb-free
CLF1G0035S-50CLF1G0035S-50,112Always Pb-free
文档资料
档案名称标题类型格式日期
AN11130Bias module for 50 V GaN demonstration boardsApplication notepdf2011-12-08
PCB_Design_CLF1G0035-50_1G0035S-50_Data-sheetPCB Design CLF1G0035(S)-50 (Data sheet)Design supportzip2014-08-18
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
RFPower_Longevity_OverviewRF Power Longevity OverviewOther typepdf2014-09-09
Application_Measurement_Report_CLF1G0035-50_3100-3500MHz_CA-029-12Application Measurement Report CLF1G0035-50 3100-3500 MHz CA-029-12Reportpdf2015-06-23
Application_Measurement_Report_CLF1G0035-50_2700-2900MHz_CA-136-12Application Measurement Report CLF1G0035-50 2700-2900 MHz CA-136-12Reportpdf2015-06-23
NXP_RFpower_Lib_V09p0RF Power Model Library for Microwave Office®Simulation modelzip2014-11-11
NXP_RFpower_Manual_MWO_20141111RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation modelpdf2014-11-11
CLF1G0035-50_ADS-2009_ModelCLF1G0035-50 ADS-2009 ModelSimulation modelzip2013-03-04
NXP_RFPower_Simulation_ExampleRF Power Simulation Example for Microwave Office®Simulation modelzip2012-06-11
CLF1G0035-50_ADS-2011_ModelCLF1G0035-50 ADS-2011 ModelSimulation modelzip2013-03-04
NXP_CLF1G0530_50_V0p15_Spar_Vgs_2n2_Vds_50_Idq_150mA_10Mto8GHzCLF1G0035-50 50V 150mA S-parameter DataS-parameters2p2012-04-04
sot467c_poflanged ceramic package; 2 mounting holes; 2 leadsOutline drawingpdf1999-12-27
SOT467C_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-11-30
sot467b_poearless ceramic package; 2 leadsOutline drawingpdf2012-05-08
订购信息
型号订购码 (12NC)可订购的器件编号
CLF1G0035-509340 664 11112CLF1G0035-50,112
CLF1G0035S-509340 664 12112CLF1G0035S-50,112
模型
标题类型日期
RF Power Model Library for Microwave Office®Simulation model2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation model2014-11-11
CLF1G0035-50 ADS-2009 ModelSimulation model2013-03-04
RF Power Simulation Example for Microwave Office®Simulation model2012-06-11
CLF1G0035-50 ADS-2011 ModelSimulation model2013-03-04
CLF1G0035-50 50V 150mA S-parameter DataS-parameter2012-04-04
其它
标题类型日期
PCB Design CLF1G0035(S)-50 (Data sheet)Design support2014-08-18
Bias module for 50 V GaN demonstration boards gan_devices
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
RF Power Longevity Overview gan_devices
Application Measurement Report CLF1G0035-50 3100-3500 MHz CA-029-12 CLF1G0035_S_50
Application Measurement Report CLF1G0035-50 2700-2900 MHz CA-136-12 CLF1G0035_S_50
flanged ceramic package; 2 mounting holes; 2 leads CLF1G0035_S_50
CDFM2; blister pack; standard product orientation 12NC ending 112 CLF1G0035_S_50
earless ceramic package; 2 leads CLF1G0035_S_50
RF Power Model Library for Microwave Office® CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
CLF1G0035-50 ADS-2009 Model CLF1G0035_S_50
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
CLF1G0035-50 ADS-2011 Model CLF1G0035_S_50
CLF1G0035-50 50V 150mA S-parameter Data CLF1G0035_S_50
PCB Design CLF1G0035(S)-50 (Data sheet) CLF1G0035_S_50