CLF1G0060(S)-10：宽带RF功率GaN HEMT

CLF1G0060-10和CLF1G0060S-10是10W通用宽带GaN HEMT，使用范围为DC至6.0 GHz。

特性和优势
    • 工作频率为DC至6.0 GHz
    • 10 W通用宽带RF功率GaN HEMT
    • 极佳的强度 (VSWR 10 : 1)
    • 高电压操作 (50 V)
    • 热增强封装
应用
    • 商业无线基础设施（蜂窝、WiMAX）
    • 雷达
    • 宽带通用放大器
    • 公共移动无线电
    • 工业、科学、医疗
    • 干扰器
    • EMC测试
    • 国防应用
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
CLF1G0060-10SOT1227A06000105033.217Pulsed RF; Pulsed RFDevelopment
CLF1G0060S-10SOT1227B06000105033.217Pulsed RF; Pulsed RFDevelopment
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
CLF1G0060-10CDFM2 (SOT1227A)sot1227a_poBulk Pack开发中Standard MarkingCLF1G0060-10U( 9340 671 84112 )
CLF1G0060S-10CDFM2 (SOT1227B)sot1227b_poBulk Pack开发中Standard MarkingCLF1G0060S-10U( 9340 671 83112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
CLF1G0060-10CLF1G0060-10UAlways Pb-freeNA
CLF1G0060S-10CLF1G0060S-10UAlways Pb-freeNA
文档资料
档案名称标题类型格式日期
CLF1G0060-10_1G0060S-10 (中文)Broadband RF power GaN HEMTData sheetpdf2013-05-30
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
Application_Measurement_Report_CLF1G0060-10_3100-3500MHz_NA-1797Application Measurement Report CLF1G0060-10 3100-3500 MHz NA-1797Reportpdf2015-06-23
Application_Measurement_Report_CLF1G0060-10_5300-5900MHz_CA-008-13Application Measurement Report CLF1G0060-10 5300-5900 MHz CA-008-13Reportpdf2015-06-23
NXP_RFpower_Lib_V09p0RF Power Model Library for Microwave Office®Simulation modelzip2014-11-11
NXP_RFpower_Manual_MWO_20141111RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation modelpdf2014-11-11
NXP_RFPower_Simulation_ExampleRF Power Simulation Example for Microwave Office®Simulation modelzip2012-06-11
CLF1G0060-10_ADS-2009_ModelCLF1G0060-10 ADS-2009 ModelSimulation modelzip2013-03-04
CLF1G0060-10_ADS-2011_ModelCLF1G0060-10 ADS-2011 ModelSimulation modelzip2013-03-04
NXP_CLF1G0060_10_V1p1_Spar_Vgs_2n2_Vd_50_Idq_20mA_10Mto8GHzCLF1G0060-10 50V 20mA S-parameter DataS-parameters2p2012-04-04
sot1227b_poEarless Flanged ceramic package; 2 leadsOutline drawingpdf2013-06-13
sot1227a_poFlanged ceramic package; 2 mounting holes; 2 leadsOutline drawingpdf2013-06-13
订购信息
型号订购码 (12NC)可订购的器件编号
CLF1G0060-109340 671 84112CLF1G0060-10U
CLF1G0060S-109340 671 83112CLF1G0060S-10U
模型
标题类型日期
RF Power Model Library for Microwave Office®Simulation model2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation model2014-11-11
RF Power Simulation Example for Microwave Office®Simulation model2012-06-11
CLF1G0060-10 ADS-2009 ModelSimulation model2013-03-04
CLF1G0060-10 ADS-2011 ModelSimulation model2013-03-04
CLF1G0060-10 50V 20mA S-parameter DataS-parameter2012-04-04
Broadband RF power GaN HEMT CLF1G0060_S_10
Broadband RF power GaN HEMT CLF1G0060_S_10
Broadband RF power GaN HEMT CLF1G0060_S_10
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
Application Measurement Report CLF1G0060-10 3100-3500 MHz NA-1797 CLF1G0060_S_10
Application Measurement Report CLF1G0060-10 5300-5900 MHz CA-008-13 CLF1G0060_S_10
Earless Flanged ceramic package; 2 leads CLF1G0060_S_30
Flanged ceramic package; 2 mounting holes; 2 leads CLF1G0060_S_30
RF Power Model Library for Microwave Office® CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
CLF1G0060-10 ADS-2009 Model CLF1G0060_S_10
CLF1G0060-10 ADS-2011 Model CLF1G0060_S_10
CLF1G0060-10 50V 20mA S-parameter Data CLF1G0060_S_10
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