PDTC115EMB NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115EMB
产品特点 Features
- 20 mA output current capability
- Reduces component count
- Built-in bias resistors
- Reduces pick and place costs
- Simplifies circuit design
- AEC-Q101 qualified
- Leadless ultra small SMD plastic package
- Low package height of 0.37 mm
|
应用
- Low-current peripheral driver
- Control of IC inputs
- Replaces general-purpose transistors in digital applications
- Mobile applications
产品实物图
 |
封装
| 型号 |
可订购的器件编号 |
订购码 (12NC) |
产品状态 |
封装 |
| PDTC115EMB |
PDTC115EMB,315 |
9340 659 53315 |
量产 |
SOT883B
(DFN1006B-3) |
外形图
| 封装版本 |
封装名称 |
封装说明 |
| SOT883B |
DFN1006B-3 |
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm |
订货和供应
| 型号 |
订购码 (12NC) |
可订购的器件编号 |
化学成分 |
| PDTC115EMB |
PDTC115EMB,315 |
9340 659 53315 |
PDTC115EMB |
PDTC115EMB 技术支持
| 档案名称 |
标题 |
类型 |
格式 |
| PDTC115EMB |
NPN resistor-equipped transistor; R1 = 100 kOhm, R2 = 100 kOhm |
Datasheet |
pdf |
