PMXB43UNE: 20 V,N沟道Trench MOSFET

N沟道增强型场效应晶体管(FET),采用使用Trench MOSFET技术的无引脚超小型DFN1010D-3 (SOT1215)表面贴装器件(SMD)塑料封装。

sot1215_3d
数据手册 (1)
名称/描述Modified Date
20 V, N-channel Trench MOSFET (REV 1.0) PDF (247.0 kB) PMXB43UNE [English]19 Sep 2013
应用说明 (7)
名称/描述Modified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English]13 Jul 2016
Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English]10 Dec 2015
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English]22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English]19 May 2014
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English]14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English]16 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English]27 Jan 2011
手册 (1)
名称/描述Modified Date
NXP® MOSFETs and bipolar transistors in DFN1010; Small and Powerful (REV 1.0) PDF (1.8 MB) 75017485 [English]04 Nov 2013
选型工具指南 (2)
名称/描述Modified Date
Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English]17 Feb 2016
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English]11 Sep 2014
封装信息 (1)
名称/描述Modified Date
DFN1010D-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm (REV 1.0) PDF (191.0 kB) SOT1215 [English]08 Feb 2016
可靠性与质量信息 (2)
名称/描述Modified Date
PMXB43UNE NXP® Product Reliability (REV 1.1) PDF (84.0 kB) PMXB43UNE_1 [English]31 Jan 2015
PMXB43UNE NXP® Product Quality (REV 1.1) PDF (74.0 kB) PMXB43UNE_NXP_PRODUCT_QUALITY [English]31 Jan 2015
支持信息 (2)
名称/描述Modified Date
Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English]07 Aug 2015
Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English]30 Sep 2013
SPICE
订购信息
型号状态Package namePackage versionChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)VGSth [typ] (V)Qr [typ] (nC)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)日期
PMXB43UNEActiveDFN1010D-3SOT1215N12054681503.20.95.75.70.40.65N551572013-09-19
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHF无铅转换日期EFRIFR(FIT)MTBF(小时)MSLMSL LF
PMXB43UNESOT1215Reflow_Soldering_ProfileReel 7" Q2/T3ActivePMXB43UNEZ (9340 671 47147)11 00 00PMXB43UNEAlways Pb-free1145.05.311.88E811
Reel 7" Q1/T1WithdrawnPMXB43UNEX (9340 671 47115)11 00 00PMXB43UNEAlways Pb-free1145.05.311.88E811
20 V, N-channel Trench MOSFET PMXB43UNE
Using power MOSFETs in parallel BUK7M12-60E
Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
Using RC Thermal Models BUK7M12-60E
LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
LFPAK MOSFET thermal design guide BUK7M12-60E
NXP® MOSFETs and bipolar transistors in DFN1010; Small and Powerful PBSS5260QA
Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW
PMXB43UNE NXP® Product Reliability PMXB43UNE
PMXB43UNE NXP® Product Quality PMXB43UNE
Power MOSFET frequently asked questions and answers BUK7M12-60E
PMXB43UNE Spice model PMXB43UNE
DFN1010D-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm PBSS5260QA
Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20
LOW_RDSON_MOSFETS_IN_ULTRA_SMALL_DFN1010_SINGLE_AND_DUAL_PACKAGE