PSMN038-100YL: N沟道100 V 37.5 mΩ逻辑电平MOSFET，采用LFPAK56封装 _ BDTIC 中国领先电子元器件代理商

PSMN038-100YL: N沟道100 V 37.5 mΩ逻辑电平MOSFET，采用LFPAK56封装

逻辑电平栅极驱动N沟道增强型场效应晶体管(FET)，采用LFPAK56封装。该产品设计适用于各种工业、通信及家用设备。

SOT669

数据手册 (1)

名称/描述	Modified Date
PSMN038-100YL (REV 1.6) PDF (323.0 kB) PSMN038-100YL [English]	01 May 2013

应用说明 (8)

名称/描述	Modified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English]	13 Jul 2016
Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English]	10 Dec 2015
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English]	22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English]	19 May 2014
Failure signature of Electrical Overstress on Power MOSFETs (REV 1.0) PDF (10.5 MB) AN11243 [English]	29 Oct 2012
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English]	14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English]	16 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English]	27 Jan 2011

选型工具指南 (2)

名称/描述	Modified Date
Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English]	17 Feb 2016
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English]	11 Sep 2014

封装信息 (1)

名称/描述	Modified Date
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads (REV 1.0) PDF (213.0 kB) SOT669 [English]	08 Feb 2016

包装 (1)

名称/描述	Modified Date
LFPAK56; Reel pack; SMD, 7" Q1/T1 standard product orientation Orderable part number ending ,115 or... (REV 3.0) PDF (101.0 kB) SOT669_115 [English]	09 Sep 2016

支持信息 (1)

名称/描述	Modified Date
Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English]	07 Aug 2015

SPICE

PSMN038-100YL Spice model (REV 1.0) lib PSMN038-100YL_1 5/2/2013

Thermal model

PSMN038-100YL Thermal model (REV 1.0) pdml PSMN038-100YL_1_2 5/1/2013

订购信息

型号	状态	Package version	Package name	Channel type	Number of transistors	V_DS [max] (V)	R_DSon [max] @ V_GS = 10 V (mΩ)	R_DSon [max] @ V_GS = 5 V (mΩ)	R_DSon [max] @ V_GS = 4.5 V (mΩ)	R_DSon [max] @ V_GS = 2.5 V (mΩ)	T_j [max] (°C)	I_D [max] (A)	Q_GD [typ] (nC)	Q_G(tot) [typ] (nC)	QG(tot) [typ] @ VGS = 4.5 V (nC)	P_tot [max] (W)	QG(tot) [typ] @ VGS = 10 V (nC)	Q_r [typ] (nC)	V_GSth [typ] (V)	Automotive qualified	C_iss [typ] (pF)	C_oss [typ] (pF)	日期
PSMN038-100YL	Active	SOT669	LFPAK56; Power-SO8	N	1	100	37.5	38			175	30	8.3	21.6		94.9	39.2	44	1.7	N	1905	137	2013-03-07

封装环保信息

产品编号	封装说明	Outline Version	回流/波峰焊接	包装	产品状态	部件编号订购码 (12NC)	Marking	化学成分	RoHS / 无铅 / RHF	MSL	MSL LF
PSMN038-100YL		SOT669		Reel 7" Q1/T1	Active	PSMN038-100YLX (9340 675 17115)	038100	PSMN038-100YL		1	1

PSMN038-100YL PSMN038-100YL

Using power MOSFETs in parallel BUK7M12-60E

Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E

LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E

Using RC Thermal Models BUK7M12-60E

Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E

LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E

LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E

LFPAK MOSFET thermal design guide BUK7M12-60E

Discretes Semiconductors Selection Guide 2016 BUK7M12-60E

NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW

Power MOSFET frequently asked questions and answers BUK7M12-60E

PSMN038-100YL Spice model PSMN038-100YL

PSMN038-100YL Thermal model PSMN038-100YL

Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads PHPT61003PY

LFPAK56; Reel pack; SMD, 7" Q1/T1 standard product orientation Orderable part number ending ,115 or... PHPT61003PY

PSMN9R5-30YLC

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