2N6035: 4.0 A, 60 V PNP Darlington Bipolar Power Transistor
The Power 4 A, 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.
特性- High DC Current Gain -hFE = 2000 (Typ) @ IC = 2.0 Adc
- Collector-Emitter Sustaining Voltage - @ 100 mAdcVCEO(sus) = 60 Vdc (Min) - 2N6035, 2N6038VCEO(sus) = 80 Vdc (Min) - 2N6036, 2N6039
- Forward Biased Second Breakdown Current CapabilityIS/b = 1.5 Adc @ 25 Vdc
- Monolithic Construction with Built-in Base-EmitterResistors to Limit Leakage Multiplication
- Space-Saving High Performance-to-Cost RatioTO-225AA Plastic Package
- Pb-Free Packages are Available
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封装
仿真模型 (4)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-225 | 77-09 (32.2kB) | AD |
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| 2N6035G | Active | Pb-free
Halide free | TO-225-3 | 77-09 | NA | Bulk Box | 500 | $0.3131 |
订购产品技术参数
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | VCE(sat) Max (V) | hFE Min (k) | hFE Max (k) | fT Min (MHz) |
|---|
| 2N6035G | PNP | 4 | 60 | 2 | 0.75 | 15 | 25 |
