2N6040: 8.0 A, 60 V PNP Darlington Bipolar Power Transistor _ BDTIC 中国领先电子元器件代理商

2N6040: 8.0 A, 60 V PNP Darlington Bipolar Power Transistor

The 8 A, 100 V NPN Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. 2N6040, 2N6042 (PNP); and 2N6043, 2N6045 (NPN) are complementary devices.

特性

High DC Current Gain -hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector-Emitter Sustaining Voltage - @ 100 mAdc -VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043VCEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044VCEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045
Low Collector-Emitter Saturation Voltage -VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040,41, 2N6043,44VCE(sat)= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Pb-Free Packages are Available

封装

2N6040 封装

仿真模型 (4)

Document Title	Document ID/Size	Revision	Revision Date
PSpice Model	2N6040.LIB (1.0kB)	0
Saber Model	2N6040.SIN (1.0kB)	0
Spice2 Model	2N6040.SP2 (1.0kB)	0
Spice3 Model	2N6040.SP3 (1.0kB)	0

封装图纸 (1)

Document Title	Document ID/Size	Revision
TO-220 3 LEAD STANDARD	221A-09 (30.9kB)	AH

数据表 (1)

Document Title	Document ID/Size	Revision	Revision Date
Plastic Medium-Power Complementary Silicon Transistors	2N6040/D (146kB)	10	Nov, 2014

产品订购型号

产品	状况	Compliance	封装		MSL*	容器		预算价格 (1千个数量的单价）
2N6040G	Active	Pb-free	TO-220-3	221A-09	NA	Tube	50	$0.4

订购产品技术参数

Product	Polarity	IC Continuous (A)	V(BR)CEO Min (V)	VCE(sat) Max (V)	hFE Min (k)	hFE Max (k)	fT Min (MHz)
2N6040G	PNP	8	60	2	1	20	4

Plastic Medium-Power Complementary Silicon Transistors (146kB) 2N6045

PSpice Model 2N6040

Saber Model 2N6040

Spice2 Model 2N6040

Spice3 Model 2N6040

TO-220 3 LEAD STANDARD NTP6412AN

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