2N6052:12 A, 100 V PNP Darlington Bipolar Power Transistor
This Bipolar Power PNP Darlington Transistor is designed for general-purpose amplifier and low frequency switching applications.
技术特性
- High DC Current Gain
hFE = 3500 (Typ) @ IC = 5.0 Adc
- Collector-Emitter Sustaining Voltage— @ 100 mA
VCEO(sus) = 80 Vdc (Min)—2N6058
100 Vdc (Min)—2N6052, 2N6059
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors
- This is a Pb-Free Device
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| 2N6052G |
Active |
Pb-free |
12 A, 100 V PNP Darlington Bipolar Power Transistor |
TO-204-2 |
1-07 |
|
Tray Foam |
100 |
$2.0879 |
