2N6109: 7.0 A, 50V PNP Bipolar Power Transistor _ BDTIC 中国领先电子元器件代理商

2N6109: 7.0 A, 50V PNP Bipolar Power Transistor

The Power 7A 70 V Bipolar NPN Transistor is designed for use in general-purpose amplifier and switching applications.

特性

DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC hFE = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc - All Devices
Collector-Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) 2N6111, 2N6288 VCEO(sus) = 50 Vdc (Min) - 2N6109 VCEO(sus) = 70 Vdc (Min) - 2N6107, 2N6292
High Current Gain Bandwidth Product fT = 4.0 MHz (Min) @ IC = 500 mAdc 2N6288, 90, 92 fT = 10 MHz (Min) @ IC = 500 mAdc - 2N6107, 09, 11
TO-220AB Compact Package
Pb-Free Packages are Available

封装

2N6109 封装

仿真模型 (4)

Document Title	Document ID/Size	Revision	Revision Date
PSpice Model	2N6109.LIB (0.0kB)	0
Saber Model	2N6109.SIN (1.0kB)	0
Spice2 Model	2N6109.SP2 (0.0kB)	0
Spice3 Model	2N6109.SP3 (0.0kB)	0

封装图纸 (1)

Document Title	Document ID/Size	Revision
TO-220 3 LEAD STANDARD	221A-09 (30.9kB)	AH

数据表 (1)

Document Title	Document ID/Size	Revision	Revision Date
Complementary Silicon Plastic Power Transistors	2N6107/D (106kB)	11	Nov, 2014

产品订购型号

产品	状况	Compliance	封装		MSL*	容器		预算价格 (1千个数量的单价）
2N6109G	Active	Pb-free	TO-220-3	221A-09	NA	Tube	50	$0.4973
2N6109	Last Shipments		TO-220-3	221A-09	NA	Tube	50

订购产品技术参数

Product	Polarity	Type	VCE(sat) Max (V)	IC Continuous (A)	V(BR)CEO Min (V)	hFE Min	hFE Max	fT Min (MHz)	PTM Max (W)
2N6109G	PNP	General Purpose	3.5	7	50	30	150	10	40

Complementary Silicon Plastic Power Transistors (106kB) 2N6292

PSpice Model 2N6109

Saber Model 2N6109

Spice2 Model 2N6109

Spice3 Model 2N6109

TO-220 3 LEAD STANDARD NTP6412AN

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