2N6287:20 A, 100 V PNP Darlington Bipolar Power Transistor

The Power 20A 100 V PNP Darlington Transistors is designed for general-purpose amplifier and low-frequency switching applications.

技术特性
  • High DC Current Gain @ IC = 10 Adc
    hFE = 2400 (Typ) - 2N6284
    hFE = 4000 (Typ) - 2N6287
  • Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min)
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • Pb-Free Packages are Available
订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
2N6287G Active Pb-free 20 A, 100 V PNP Darlington Bipolar Power Transistor TO-204-2 1-07   Tray Foam 100 $2.0879
封装图 PACKAGE DIMENSIONS

2N6287 封装图

概述 版本信息 大小
2N6287 数据资料DataSheet下载:pdf Rev.V2 2 页