2N6491: Power Bipolar Transistor, NPN, 80 V, 15 A

The 15 A, 80 V PNP Bipolar Power Transistor is designed for use in general-purpose amplifier and switching applications. 2N6487, 2N6488 (NPN); and 2N6490, 2N6491 (PNP) are complementary devices.

特性
  • DC Current Gain Specified to 15 Amperes-- hFE = 20-150 @ IC = 5.0 Adc; hFE= 5.0 (Min) @ IC = 15 Adc
  • Collector-Emitter Sustaining Voltage--VCEO(sus) = 60 Vdc (Min) - 2N6487, 2N6490; VCEO(sus)= 80 Vdc (Min) - 2N6488, 2N6491
  • High Current Gain--Bandwidth ProductfT = 5.0 MHz (Min) @ IC = 1.0 Adc
  • TO-220AB Compact Package
  • Pb-Free Packages are Available
应用
  • Designed for use in general-purpose amplifier and switching applications.
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice Model2N6491.LIB (0.0kB)0
Saber Model2N6491.SIN (1.0kB)0
Spice2 Model2N6491.SP2 (0.0kB)0
Spice3 Model2N6491.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-220 3 LEAD STANDARD221A-09 (30.9kB)AH
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Complementary Silicon Plastic Power Transistors2N6487/D (98kB)16Nov, 2014
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
2N6491GActivePb-freeTO-220-3221A-09NATube50$0.5933
2N6491Last ShipmentsTO-220-3221A-09NATube50
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
2N6491GPNPGeneral Purpose1.3158020150575
Complementary Silicon Plastic Power Transistors (98kB) 2N6491
PSpice Model 2N6491
Saber Model 2N6491
Spice2 Model 2N6491
Spice3 Model 2N6491
TO-220 3 LEAD STANDARD NTP6412AN