BDV65B: 10 A, 100 V NPN Darlington Bipolar Power Transistor
The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.
特性- High DC Current Gain HFE = 1000 (min.) @ 5 Adc
- Monolithic Construction with Built-in Base Emitter Shunt Resistors
- These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.
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仿真模型 (4)
封装图纸 (2)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| BDV65BG | Active | Pb-free | TO-247 | 联系BDTIC | NA | Tube | 30 | $1.008 |
| BDV65B | Last Shipments | | SOT-93-3 / TO-218-3 | 340D-02 | NA | Tube | 30 | |
订购产品技术参数
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | VCE(sat) Max (V) | hFE Min (k) | hFE Max (k) | fT Min (MHz) |
|---|
| BDV65BG | NPN | 10 | 100 | 2 | 1 | - | - |
