BDX33B: 10 A, 80 V NPN Darlington Bipolar Power Transistor
The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.
特性- High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0
- Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C
- Low Collector-Emitter Saturation Voltage CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C
- Monolithic Construction with Build-In Base-Emitter Shunt resistors
- TO-220AB Compact Package
- Pb-Free Packages are Available
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封装
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| BDX33BG | Active | Pb-free | TO-220-3 | 221A-09 | NA | Tube | 50 | $0.4307 |
| BDX33B | Last Shipments | | TO-220-3 | 221A-09 | NA | Tube | 50 | |
订购产品技术参数
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | VCE(sat) Max (V) | hFE Min (k) | hFE Max (k) | fT Min (MHz) |
|---|
| BDX33BG | NPN | 10 | 80 | 2.5 | 0.75 | - | - |
