BDX33B:10 A, 80 V NPN Darlington Bipolar Power Transistor
The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.
技术特性
- High DC Current Gain -
hFE = 2500 (typ.) at IC = 4.0
- Collector-Emitter Sustaining Voltage at 100 mAdc
VCEO(sus) = 80 Vdc (min.) BDX33B, 34B
VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C
- Low Collector-Emitter Saturation Voltage
CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C
- Monolithic Construction with Build-In Base-Emitter Shunt resistors
- TO-220AB Compact Package
- Pb-Free Packages are Available
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| BDX33BG |
Active |
Pb-free |
10 A, 80 V NPN Darlington Bipolar Power Transistor |
TO-220-3 |
221A-09 |
|
Tube |
50 |
$0.4307 |
| BDX33B |
Last Shipments |
|
10 A, 80 V NPN Darlington Bipolar Power Transistor |
TO-220-3 |
221A-09 |
|
Tube |
50 |
|
数据资料DataSheet下载
