BDX33C:10 A, 100 V NPN Darlington Bipolar Power Transistor

The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33C, BDX33C, BDX34B and BDX34C are complementary devices.

技术特性
  • High DC Current Gain -
    hFE = 2500 (typ.) at IC = 4.0
  • Collector-Emitter Sustaining Voltage at 100 mAdc
    VCEO(sus) = 80 Vdc (min.) BDX33B, 34B 
    VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C
  • Low Collector-Emitter Saturation Voltage
    CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33C, 33C/34B, 34C
  • Monolithic Construction with Build-In Base-Emitter Shunt resistors
  • TO-220AB Compact Package
  • Pb-Free Packages are Available
封装图 PACKAGE DIMENSIONS

BDX33C 封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
BDX33CG Active Pb-free 10 A, 100 V NPN Darlington Bipolar Power Transistor TO-220-3 221A-09   Tube 50 $0.4307
BDX33C Last Shipments 10 A, 100 V NPN Darlington Bipolar Power Transistor TO-220-3 221A-09   Tube 50  
数据资料DataSheet下载
概述 版本信息 大小
BDX33C 数据资料DataSheet下载:pdf Rev.V2 2 页