BDX53B:Medium Power NPN Darlington Bipolar Power Transistor
The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.
技术特性
- High DC Current Gain
hFE = 2500 (Typ) @ IC = 4.0 Adc
- Collector Emitter Sustaining Voltage @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) BDX53B, 54B
- VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
- Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
- VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors
- TO-220AB Compact Package
- Pb-Free Packages are Available
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引脚图 PIN CONNECTIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| BDX53BG |
Active |
Pb-free |
Medium Power NPN Darlington Bipolar Power Transistor |
TO-220-3 |
221A-09 |
|
Tube |
50 |
$0.4307 |
| BDX53B |
Last Shipments |
|
Medium Power NPN Darlington Bipolar Power Transistor |
TO-220-3 |
221A-09 |
|
Tube |
50 |
|
数据资料DataSheet下载
