BSP19A: NPN Bipolar Transistor
The NPN Bipolar Transistor is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
特性- High Voltage: V(BR)CEO of 250 and 350 Volts.
- The SOT-223 package can be soldered using wave or reflow.
- SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die
- PNP Complement is BSP16T1
- Moisture Sensitivity Level (MSL): 1
- ESD: Human Body Model (HBM) = 4 KVMachine Model (MM) = 400 V
- Pb-Free Package is Available
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仿真模型 (8)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| BSP19AT1G | Active | AEC Qualified
Pb-free
Halide free | NPN Bipolar Transistor | SOT-223-4 / TO-261-4 | 318E-04 | 1 | Tape and Reel | 1000 | $0.272 |
| NSVBSP19AT1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | NPN Bipolar Transistor | SOT-223-4 / TO-261-4 | 318E-04 | 1 | Tape and Reel | 1000 | $0.2992 |
| BSP19AT1 | Last Shipments | | NPN Bipolar Transistor | SOT-223-4 / TO-261-4 | 318E-04 | 1 | Tape and Reel | 1000 | |
订购产品技术参数
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| BSP19AT1G | NPN | 0.1 | 350 | 40 | - | 70 | 0.8 |
| NSVBSP19AT1G | NPN | 0.1 | 350 | 40 | - | 70 | 0.8 |
