BUV21: 40 A, 200V NPN Bipolar Power Transistor
The 40 A, 200 V NPN Bipolar Power Transistor is designed for high speed, high current and high power applications.
特性- High DC current gain: hFE min. = 20 at IC = 12 A
- Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 8 A
- Very fast switching times: TF max. = 0.4 µs at IC=25A
- Pb-Free Package is Available
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仿真模型 (4)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-204 (TO-3) | 197A-05 (3.2kB) | |
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| BUV21G | Active | Pb-free | TO-204-2 / TO-3-2 | 197A-05 | NA | Tray Foam | 100 | $5.9759 |
订购产品技术参数
| Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| BUV21G | NPN | General Purpose | | 40 | 200 | 20 | 60 | 8 | 250 |
