EMD4DXV6: Complementary Bipolar Digital Transistor (BRT)
The Dual Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base¿emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. This eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series, two complementary devices are housed in the SOT¿563 package, which is ideal for low power surface mount applications where board space is at a premium.
特性- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- Available in 8 mm, 7 inch Tape and Reel
- These are Pb-Free Devices
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封装
应用注释 (1)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| EMD4DXV6T1G | Active | AEC Qualified
Pb-free
Halide free | SOT-563 | 联系BDTIC | 1 | Tape and Reel | 4000 | $0.08 |
| EMD4DXV6T5 | Last Shipments | Pb-free
Halide free | SOT-563 | 联系BDTIC | 1 | Tape and Reel | 8000 | |
| EMD4DXV6T5G | Active | AEC Qualified
Pb-free
Halide free | SOT-563 | 联系BDTIC | 1 | Tape and Reel | 8000 | $0.08 |
| NSVEMD4DXV6T5G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SOT-563 | 联系BDTIC | 1 | Tape and Reel | 8000 | $0.088 |
订购产品技术参数
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | R1 (kΩ) | R2 (kΩ) | R1/R2 Typ | Vi(off) Max (V) | Vi(on) Min (V) |
|---|
| EMD4DXV6T1G | Complementary | 0.1 | 50 | 80 | 10 | 47 | 0.21 | - | - |
| EMD4DXV6T5G | Complementary | 0.1 | 50 | 80 | 10 | 47 | 0.21 | - | - |
| NSVEMD4DXV6T5G | Complementary | 0.1 | 50 | 80 | 10 | 47 | 0.21 | - | - |
