EMX1: Dual NPN Bipolar Transistor
This Dual NPN Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium.
特性- High hFE, 210-460 (Typical)
- Low VCE(sat), < 0.5V
- Pb-free Solder Plating
- These are Pb-Free Devices
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101Qualified and PPAP Capable
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封装
仿真模型 (3)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| EMX1DXV6T1 | Last Shipments | Pb-free
Halide free | SOT-563 | 联系BDTIC | 1 | Tape and Reel | 4000 | |
| EMX1DXV6T1G | Active | AEC Qualified
Pb-free
Halide free | SOT-563 | 联系BDTIC | 1 | Tape and Reel | 4000 | $0.08 |
| EMX1DXV6T5 | Last Shipments | Pb-free
Halide free | SOT-563 | 联系BDTIC | 1 | Tape and Reel | 8000 | |
| EMX1DXV6T5G | Active | AEC Qualified
Pb-free
Halide free | SOT-563 | 联系BDTIC | 1 | Tape and Reel | 8000 | $0.08 |
| NSVEMX1DXV6T1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SOT-563 | 联系BDTIC | 1 | Tape and Reel | 4000 | $0.088 |
订购产品技术参数
| Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| EMX1DXV6T1G | Dual NPN | General Purpose | | 0.1 | 50 | 120 | 560 | - | 0.357 |
| EMX1DXV6T5G | Dual NPN | General Purpose | | 0.1 | 50 | 120 | 560 | - | 0.357 |
| NSVEMX1DXV6T1G | Dual NPN | | | 0.1 | 50 | 120 | 560 | - | 0.357 |
