HN1B01FDW1: NPN PNP Bipolar Transistor
The Dual NPN PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SC-74 package, which is designed for low power surface mount applications.
特性- High Voltage and High Current: VCEO = 50 V, IC = 200 mA
- High hFE: hFE = 200-400
- Moisture Sensitivity Level: 1
- ESD Rating - Human Body Model: 3A - Machine Model: C
- Pb-Free Package is Available
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
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封装
仿真模型 (2)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| PSpice Model | hn1b01fdw1.LIB (2kB) | 1 | Jan, 2017 |
| Spice3 Model | hn1b01fdw1.SP3 (2kB) | 0 | Jan, 2017 |
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| HN1B01FDW1T1G | Active | AEC Qualified
Pb-free
Halide free | SC-74 | 318F-05 | 1 | Tape and Reel | 3000 | $0.032 |
| SHN1B01FDW1T1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SC-74 | 318F-05 | 1 | Tape and Reel | 3000 | $0.0567 |
| HN1B01FDW1T1 | Last Shipments | | SC-74 | 318F-05 | 1 | Tape and Reel | 3000 | |
订购产品技术参数
| Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| HN1B01FDW1T1G | Complementary | General Purpose | | 0.2 | 50 | 200 | 400 | - | 0.38 |
| SHN1B01FDW1T1G | Complementary | | | 0.2 | 50 | 200 | 400 | - | 0.38 |
