MCH5839: Power MOSFET, -20V, 266mOhm, -1.5A, Single P-Channel, with Schottky Diode

MCH5839 is a P-Channel Power MOSFET, with Schottky Diode for general-purpose switching device applications.

特性
  • Pb-Free, Halogen Free and RoHS Compliance
  • MOSFET : ESD Diode - Protected Gate
  • MOSFET : 1.8V Drive
  • Ultrasmall package MCPH5(2.0mm x 2.1mm x 0.85mmt)
  • MOSFET : Low On-resistance RDS(on)1 = 205mΩ (typ)
  • Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting
  • SBD : Short reverse recovery time
  • SBD : Low forward voltage
优势
  • Environmental consideration
  • ESD resistance
  • Drive at low voltage
  • Small and slim applied set
  • Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation
应用
  • DC-DC Converter
终端产品
  • FAX
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET, -20V, 266mOhm, -1.5A, Single P-Channel, with Schottky DiodeMCH5839/D (832kB)1Aug, 2015
封装图纸 (1)
Document TitleDocument ID/SizeRevision
MCPH5419AP (48.4kB)O
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MCH5839-TL-HActive, Not RecPb-free Halide freeSC-88AFL / MCPH-5419AP1Tape and Reel3000$0.1467
MCH5839-TL-WActivePb-free Halide freeSC-88AFL / MCPH-5419AP1Tape and Reel3000$0.12
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)RDS(on) Max @ VGS = 2.5 V (mΩ)RDS(on) Max @ VGS = 4.5 V (mΩ)RDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
MCH5839-TL-WP-Channelwith Schottky Diode-2010-1.4-1.50.84312661.70.471202620
Power MOSFET, -20V, 266mOhm, -1.5A, Single P-Channel, with Schottky Diode (832kB) MCH5839
MCPH5 MCH5839