MJ11016: 30 A, 120 V NPN Darlington Bipolar Power Transistor

The NPN Darlington Bipolar Power Transistor is designed for use as output devices in complementary general purpose amplifier applications. The MJ11015 (PNP); MJ11012 and MJ11016 (NPN) are complementary devices.

特性
  • High DC Current Gain - hFE = 1000 (Min) @ IC - 20 Adc
  • Monolithic Construction with Built-in Base Emitter Shunt Resistor
  • Junction Temperature to +200°C
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelMJ11016.LIB (1.0kB)0
Saber ModelMJ11016.SIN (1.0kB)0
Spice2 ModelMJ11016.SP2 (1.0kB)0
Spice3 ModelMJ11016.SP3 (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-204 (TO-3)1-07 (32kB)Z
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
High-Current Complementary Silicon TransistorsMJ11012/D (115.0kB)5
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MJ11016GActivePb-freeTO-204-21-07NATray Foam100$2.2493
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)VCE(sat) Max (V)hFE Min (k)hFE Max (k)fT Min (MHz)
MJ11016GNPN3012031-4
High-Current Complementary Silicon Transistors (115.0kB) MJ11016
PSpice Model MJ11016
Saber Model MJ11016
Spice2 Model MJ11016
Spice3 Model MJ11016
TO-204 (TO-3) 2N6341