MJ11032: 50 A, 120 V NPN Darlington Bipolar Power Transistor
These Bipolar Power Darlington Transistors are for use as output devices in complementary general purpose amplifier applications.
特性- High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc
- Curves to 100 A (Pulsed)
- Diode Protection to Rated IC
- Monolithic Construction with Built-In Base-Emitter Shunt Resistor
- Junction Temperature to +200°C
- Pb-Free Packages are Available
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仿真模型 (4)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-204 (TO-3) | 197A-05 (3.2kB) | |
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MJ11032G | Active | Pb-free | TO-204-2 / TO-3-2 | 197A-05 | NA | Tray Foam | 100 | $5.1479 |
订购产品技术参数
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | VCE(sat) Max (V) | hFE Min (k) | hFE Max (k) | fT Min (MHz) |
|---|
| MJ11032G | NPN | 50 | 120 | 2.5 | 1 | 18 | - |
