MJ11032:50 A, 120 V NPN Darlington Bipolar Power Transistor
These Bipolar Power Darlington Transistors are for use as output devices in complementary general purpose amplifier applications.
技术特性
- High DC Current Gain -
hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc
- Curves to 100 A (Pulsed)
- Diode Protection to Rated IC
- Monolithic Construction with Built-In Base-Emitter Shunt Resistor
- Junction Temperature to +200°C
- Pb-Free Packages are Available
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| MJ11032G |
Active |
Pb-free |
50 A, 120 V NPN Darlington Bipolar Power Transistor |
TO-204-2 / TO-3-2 |
197A-05 |
|
Tray Foam |
100 |
$5.1479 |
数据资料DataSheet下载
