MJ14002: 60 A, 80 V NPN Bipolar Power Transistor

The NPN Bipolar Power Transistor is designed for use in high power amplifier and switching circuit applications.. The MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) are complementary devices.

特性
  • High Current Capability - IC Continuous = 60 Amperes
  • DC Current Gain - hFE = 15-100 @ IC = 50 Adc
  • Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc
  • Pb-Free Packages are Available
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelMJ14002.LIB (0.0kB)0
Saber ModelMJ14002.SIN (1.0kB)0
Spice2 ModelMJ14002.SP2 (0.0kB)0
Spice3 ModelMJ14002.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-204 (TO-3)197A-05 (3.2kB)
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
High Current Complementary Silicon Power TransistorsMJ14001/D (90.0kB)6
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MJ14002GActivePb-freeTO-204-2 / TO-3-2197A-05NATray Foam100$8.3518
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MJ14002GNPNGeneral Purpose608015100-300
High Current Complementary Silicon Power Transistors (90.0kB) MJ14002
PSpice Model MJ14002
Saber Model MJ14002
Spice2 Model MJ14002
Spice3 Model MJ14002
TO-204 (TO-3) 2N5686