MJ2955: 15 A, 60 V PNP Bipolar Power Transistor

The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.

特性
  • DC Current Gain - hFE = 20-70 @ IC = 4 Adc
  • Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
  • Excellent Safe Operating Area
  • Pb-Free Packages are Available
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelMJ2955.LIB (0.0kB)0
Saber ModelMJ2955.SIN (1.0kB)0
Spice2 ModelMJ2955.SP2 (0.0kB)0
Spice3 ModelMJ2955.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-204 (TO-3)1-07 (32kB)Z
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Complementary Silicon Power Transistors2N3055/D (70.0kB)6
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MJ2955GActivePb-freeTO-204-21-07NATray Foam100$1.338
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MJ2955GPNPGeneral Purpose156020702.5115
Complementary Silicon Power Transistors (70.0kB) 2N3055
PSpice Model MJ2955
Saber Model MJ2955
Spice2 Model MJ2955
Spice3 Model MJ2955
TO-204 (TO-3) 2N6341