MJ2955: 15 A, 60 V PNP Bipolar Power Transistor

The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.

特性
  • DC Current Gain - hFE = 20-70 @ IC = 4 Adc
  • Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
  • Excellent Safe Operating Area
  • Pb-Free Packages are Available
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelMJ2955.LIB (0.0kB)0
Saber ModelMJ2955.SIN (1.0kB)0
Spice2 ModelMJ2955.SP2 (0.0kB)0
Spice3 ModelMJ2955.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-204 (TO-3)1-07 (32kB)Z
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Complementary Silicon Power Transistors2N3055/D (70.0kB)6
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MJ2955GActivePb-freeTO-204-21-07NATray Foam100$1.338
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MJ2955GPNPGeneral Purpose156020702.5115
Datasheet
Complementary Silicon Power Transistors (70.0kB) 2N3055
Other
TO-204 (TO-3) 2N6341
PSpice Model MJ2955
Saber Model MJ2955
Spice2 Model MJ2955
Spice3 Model MJ2955