MJB44H11: Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
特性- Low Collector-Emitter Saturation Voltage -VCE(sat) = 1.0 V (Max) @ 8.0 A
- Fast Switching Speeds
- Complementary Pairs Simplifies Designs
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- PbFree Packages are Available
|
封装
仿真模型 (4)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| D2PAK 2 LEAD | 418B-04 (35.3kB) | L |
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MJB44H11G | Active | AEC Qualified
Pb-free
Halide free | D2PAK-3 | 418B-04 | 1 | Tube | 50 | $0.56 |
| MJB44H11T4G | Active | Pb-free
Halide free | D2PAK-3 | 418B-04 | 1 | Tape and Reel | 800 | $0.56 |
| NJVMJB44H11T4G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | D2PAK-3 | 418B-04 | 1 | Tape and Reel | 800 | $0.62 |
订购产品技术参数
| Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| MJB44H11G | NPN | General Purpose | | 10 | 80 | 60 | - | - | 50 |
| MJB44H11T4G | NPN | General Purpose | | 10 | 80 | 60 | - | - | 50 |
| NJVMJB44H11T4G | NPN | General Purpose | | 10 | 80 | 60 | - | - | 50 |
