MJD128:8.0 A, 120 V PNP Darlington Bipolar Power Transistor

The PNP Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

技术特性
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These are PbFree Devices
封装图 PACKAGE DIMENSIONS

MJD128封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MJD128T4G Active
Pb-free
Halide free
8.0 A, 120 V PNP Darlington Bipolar Power Transistor DPAK-3 369C 1 Tape and Reel 2500 $0.2667
NJVMJD128T4G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
8.0 A, 120 V PNP Darlington Bipolar Power Transistor DPAK-3 369C 1 Tape and Reel 2500 $0.3227
数据资料DataSheet下载
概述 版本信息 大小
MJD128数据资料DataSheet下载:pdf Rev.V2 2 页