MJD210: 5.0 A, 25 V PNP Bipolar Power Transistor
The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.
特性- Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
- High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc= 45 (Min) @ IC = 2 Adc= 10 (Min) @ IC = 5 Adc
- Low Collector-Emitter Saturation Voltage - VCE(sat)
= 0.30 Vdc (Max) @ IC = 500 mAdc
= 0.75 Vdc (Max) @ IC = 2.0 Adc
- High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
- Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS Compliant
- MJD200 is the complementary NPN device
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封装
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) |
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MJD210G | Active | AEC Qualified
Pb-free
Halide free | DPAK-3 | 369C | 1 | Tube | 75 | $0.2288 |
MJD210RLG | Active | AEC Qualified
Pb-free
Halide free | DPAK-3 | 369C | 1 | Tape and Reel | 1800 | $0.2631 |
MJD210T4G | Active | Pb-free
Halide free | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | $0.2288 |
NJVMJD210T4G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | $0.2517 |
订购产品技术参数
Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
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MJD210G | PNP | General Purpose | | 5 | 25 | 45 | 180 | 3 | 12.5 |
MJD210RLG | PNP | General Purpose | | 5 | 25 | 45 | 180 | 3 | 12.5 |
MJD210T4G | PNP | General Purpose | | 5 | 25 | 45 | 180 | 3 | 12.5 |
NJVMJD210T4G | PNP | General Purpose | | 5 | 25 | 45 | 180 | 3 | 12.5 |