MJD47: 1.0 A, 250 V High Voltage NPN Bipolar Power Transistor

The NPN Bipolar Power Transistor is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications.

特性
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("-1" Suffix)
  • Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
  • Electrically Similar to Popular TIP47, and TIP50
  • 250 and 400 V (Min) VCEO(sus)
  • 1 A Rated Collector Current
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb-Free and are RoHS Compliant
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
LIB Model for MJD47MJD47.LIB (0.0kB)0
SIN Model for MJD47MJD47.SIN (0.0kB)0
SP2 Model for MJD47MJD47.SP2 (0.0kB)0
SP3 Model for MJD47MJD47.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
DPAK (SINGLE GAUGE) TO-252369C (34.6kB)F
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
High Voltage Power TransistorsMJD47/D (75kB)15
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MJD47GActiveAEC Qualified Pb-free Halide freeDPAK-3369C1Tube75$0.2765
MJD47T4GActivePb-free Halide freeDPAK-3369C1Tape and Reel2500$0.2765
NJVMJD47T4GActiveAEC Qualified PPAP Capable Pb-free Halide freeDPAK-3369C1Tape and Reel2500$0.3041
MJD47T4Last ShipmentsDPAK-3369C1Tape and Reel2500
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MJD47GNPNGeneral Purpose1250301501015
MJD47T4GNPNGeneral Purpose1250301501015
NJVMJD47T4GNPNGeneral Purpose1250301501015
High Voltage Power Transistors (75kB) MJD50
LIB Model for MJD47 MJD47
SIN Model for MJD47 MJD47
SP2 Model for MJD47 MJD47
SP3 Model for MJD47 MJD47
DPAK (SINGLE GAUGE) TO-252 NCV8408