MJE182: 3.0 A NPN Bipolar Power Transistor

The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. The MJE170, MJE171, MJE172 (PNP); MJE180, MJE181, MJE182 (NPN) are complementary devices.

特性
  • Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc - MJE171, MJE181 VCEO(sus) = 80 Vdc - MJE172, MJE182
  • DC Current Gain - hFE = 30 (Min) @ IC = 0.5 Adc hFE = 12 (Min) @ IC = 1.5 Adc
  • Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB
  • Pb-Free Packages are Available
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelMJE182.LIB (0.0kB)0
Saber ModelMJE182.SIN (1.0kB)0
Spice2 ModelMJE182.SP2 (0.0kB)0
Spice3 ModelMJE182.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-22577-09 (32.2kB)AD
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Complementary Plastic Silicon Power TransistorsMJE171/D (119kB)13DEC, 2013
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MJE180GActivePb-free Halide freeTO-225-377-09NABulk Box500$0.24
MJE182GActivePb-free Halide freeTO-225-377-09NABulk Box500$0.2452
MJE180Last ShipmentsTO-225-377-09NABulk Box500
MJE182Last ShipmentsTO-225-377-09NABulk Box500
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MJE180GNPNGeneral Purpose340502505012.5
MJE182GNPNGeneral Purpose380502505012.5
Complementary Plastic Silicon Power Transistors (119kB) MJE182
PSpice Model MJE182
Saber Model MJE182
Spice2 Model MJE182
Spice3 Model MJE182
TO-225 2N5657