MJE200: 5.0 A, 25 V NPN Bipolar Power Transistor
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
特性- Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
- High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc hFE = 45 (Min) @ IC = 2.0 Adc hFE = 10 (Min) @ IC = 5.0 Adc
- Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc
- High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
- Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
- Pb-Free Packages are Available
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封装
仿真模型 (4)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-225 | 77-09 (32.2kB) | AD |
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MJE200G | Active | Pb-free
Halide free | TO-225-3 | 77-09 | NA | Bulk Box | 500 | $0.2192 |
| MJE200 | Last Shipments | | TO-225-3 | 77-09 | NA | Bulk Box | 500 | |
订购产品技术参数
| Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| MJE200G | NPN | General Purpose | | 5 | 25 | 45 | 180 | 65 | 15 |
