MJE210: 5.0 A, 25 V PNP Bipolar Power Transistor _ BDTIC 中国领先电子元器件代理商

MJE210: 5.0 A, 25 V PNP Bipolar Power Transistor

The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.

特性

Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc hFE = 45 (Min) @ IC = 2.0 Adc hFE = 10 (Min) @ IC = 5.0 Adc
Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc
High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
Pb-Free Packages are Available

封装

仿真模型 (4)

Document Title	Document ID/Size	Revision	Revision Date
PSpice model	MJE210.LIB (0.0kB)	0
Saber model	MJE210.SIN (1.0kB)	0
Spice 2 model	MJE210.SP2 (0.0kB)	0
Spice 3 model	MJE210.SP3 (0.0kB)	0

封装图纸 (1)

Document Title	Document ID/Size	Revision
TO-225	77-09 (32.2kB)	AD

数据表 (1)

Document Title	Document ID/Size	Revision	Revision Date
Complementary Silicon Power Plastic Transistors	MJE200/D (164kB)	15	DEC, 2013

产品订购型号

产品	状况	Compliance	封装		MSL*	容器		预算价格 (1千个数量的单价）
MJE210G	Active	Pb-free Halide free	TO-225-3	77-09	NA	Bulk Box	500	$0.2192
MJE210TG	Last Shipments	Pb-free Halide free	TO-225-3	77-09	NA	Bulk Box	50
MJE210	Last Shipments		TO-225-3	77-09	NA	Bulk Box	500