MJE3055T: Bipolar Power Transistor, NPN, 10 A, 60 V, 75 Watt

The Bipolar Power Transistor is designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices.

特性
  • DC Current Gain Specified to 10 Amperes
  • High Current Gain - Bandwidth Product - fT = 2.0 MHz (Min) @ IC fT = 500 mAdc
  • Pb-Free Packages are Available
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelMJE3055T.LIB (0.0kB)0
Saber ModelMJE3055T.SIN (1.0kB)0
Spice2 ModelMJE3055T.SP2 (0.0kB)0
Sppice3 ModelMJE3055T.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-220 3 LEAD STANDARD221A-09 (30.9kB)AH
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Complementary Silicon Plastic Power TransistorsMJE2955T/D (60kB)12
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MJE3055TGActivePb-freeTO-220-3221A-09NATube50$0.6
MJE3055TLast ShipmentsTO-220-3221A-09NATube50
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MJE3055TGNPNGeneral Purpose1060201002125
Complementary Silicon Plastic Power Transistors (60kB) MJE3055T
PSpice Model MJE3055T
Saber Model MJE3055T
Spice2 Model MJE3055T
Sppice3 Model MJE3055T
TO-220 3 LEAD STANDARD NTP6412AN