MJE802: 4.0 A, 80 V NPN Darlington Bipolar Power Transistor
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP); and MJE800, MJE802, MJE803 (NPN) are complementary devices.
特性- High DC Current Gain - hFE = 2000 (Typ) @ IC = 2.0 Adc
- Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication
- Choice of Packages - MJE700 and MJE800 series
- Pb-Free Packages are Available
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封装
仿真模型 (8)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-225 | 77-09 (32.2kB) | AD |
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MJE802G | Active | Pb-free
Halide free | TO-225-3 | 77-09 | NA | Bulk Box | 500 | $0.3067 |
| MJE803G | Active | Pb-free
Halide free | TO-225-3 | 77-09 | NA | Bulk Box | 500 | $0.3067 |
| MJE802 | Last Shipments | | TO-225-3 | 77-09 | NA | Bulk Box | 500 | |
订购产品技术参数
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | VCE(sat) Max (V) | hFE Min (k) | hFE Max (k) | fT Min (MHz) |
|---|
| MJE802G | NPN | 4 | 80 | 2.5 | 0.75 | - | - |
| MJE803G | NPN | 4 | 80 | 2.8 | 0.75 | - | - |
