MJF31C: NPN Bipolar Power Transistor
The Bipolar Power Transistor is designed for general purpose amplifier and switching applications. The MJF31C (NPN) and MJF32C (PNP) are complementary devices.
特性- Collector–Emitter Saturation Voltage –VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
- Collector–Emitter Sustaining Voltage – VCEO(sus) = 100 Vdc (Min)
- High Current Gain – Bandwidth ProductfT = 3.0 MHz (Min) @ IC = 500 mAdc
- UL Recognized, File #E69369, to 3500 VRMS Isolation
- Pb-Free Packages are Available
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封装
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MJF31CG | Active | Pb-free | TO-220 FULLPAK-3 | 221D-03 | NA | Tube | 50 | $0.516 |
| MJF31C | Last Shipments | | TO-220 FULLPAK-3 | 221D-03 | NA | Tube | 50 | |
订购产品技术参数
| Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| MJF31CG | NPN | General Purpose | | 3 | 100 | 10 | 50 | 3 | 30 |
