MJH11022: 15 A, 250 V NPN Darlington Bipolar Power Transistor

The Darlington Bipolar Power Transistor is designed for use as general purpose amplifiers, low frequency switching and motor control applications. The MJH11017, MJH11019, MJH11021 (PNP); MJH11018, MJH11020, MJH11022 (NPN) are complementary devices.

特性
  • High DC Current Gain @ 10 Adc - hFE = 400 Min (All Types)
  • Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) MJH11018, 17 VCEO(sus) = 200 Vdc (Min) - MJH11020, 19 VCEO(sus) = 250 Vdc (Min) - MJH11022, 21
  • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A
  • Monolithic Construction
  • Pb-Free Packages are Available
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice modelMJH11022.LIB (1.0kB)0
Saber modelMJH11022.SIN (1.0kB)0
Spice 2 modelMJH11022.SP2 (1.0kB)0
Spice 3 modelMJH11022.SP3 (1.0kB)0
封装图纸 (2)
Document TitleDocument ID/SizeRevision
SOT-93 (T0-218) 4 LEAD340D-02 (67.7kB)E
TO-247340L-02 (57.4kB)F
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Complementary Darlington Silicon Power TransistorsMJH11017/D (95kB)10
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MJH11022GActivePb-freeTO-247-3340L-02NATube30$2.3999
MJH11022Last ShipmentsSOT-93-3 / TO-218-3340D-02NATube30
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)VCE(sat) Max (V)hFE Min (k)hFE Max (k)fT Min (MHz)
MJH11022GNPN152502.50.4153
Complementary Darlington Silicon Power Transistors (95kB) MJH11022
PSpice model MJH11022
Saber model MJH11022
Spice 2 model MJH11022
Spice 3 model MJH11022
TO-247 NGTG50N60FWG
SOT-93 (T0-218) 4 LEAD TIP36C