MMBT2222AL: NPN Bipolar Transistor

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.

特性
  • Pb-Free Packages are Available
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
MMBT2222ALT LIB ModelMMBT2222ALT1.LIB4
MMBT2222ALT SIN ModelMMBT2222ALT1.SIN (1kB)1
MMBT2222ALT SP2 ModelMMBT2222ALT1.SP21
MMBT2222ALT SP3 ModelMMBT2222ALT1.SP31
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SOT-23318-08 (33.4kB)AR
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
General Purpose NPN TransistorsMMBT2222LT1/D (159kB)11Oct, 2016
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MMBT2222ALT1GActiveAEC Qualified Pb-free Halide freeSOT-23-3318-081Tape and Reel3000$0.0199
MMBT2222ALT3GActiveAEC Qualified Pb-free Halide freeSOT-23-3318-081Tape and Reel10000$0.0199
SMMBT2222ALT1GActiveAEC Qualified PPAP Capable Pb-free Halide freeSOT-23-3318-081Tape and Reel3000$0.0249
SMMBT2222ALT3GActiveAEC Qualified PPAP Capable Pb-free Halide freeSOT-23-3318-081Tape and Reel10000$0.0249
MMBT2222ALT1LifetimeSOT-23-3318-081Tape and Reel3000
MMBT2222ALT3ObsoleteSOT-23-3318-081Tape and Reel10000
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MMBT2222ALT1GNPNGeneral Purpose0.6401003003000.225
MMBT2222ALT3GNPNGeneral Purpose0.6401003003000.225
SMMBT2222ALT1GNPN0.6401003003000.225
SMMBT2222ALT3GNPN0.6401003003000.225
General Purpose NPN Transistors (159kB) MMBT2222L
MMBT2222ALT LIB Model MMBT2222AL
MMBT2222ALT SIN Model MMBT2222AL
MMBT2222ALT SP2 Model MMBT2222AL
MMBT2222ALT SP3 Model MMBT2222AL
SOT-23 CM1214A