MMBT5087L: PNP Bipolar Transistor
This PNP Bipolar transistor is designed for high gain, low noise general purpose amplifier applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.
特性- Low rDS(on) Provides Higher Efficiency and Extends Battery Life
- Miniature SOT-23 Surface Mount Package Saves Board Space
- Pb-Free Packages are Available
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封装
数据表 (1)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| SOT-23 | 318-08 (33.4kB) | AR |
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MMBT5087LT1G | Active | AEC Qualified
Pb-free
Halide free | SOT-23-3 | 318-08 | 1 | Tape and Reel | 3000 | $0.0287 |
| MMBT5087LT3G | Active | AEC Qualified
Pb-free
Halide free | SOT-23-3 | 318-08 | 1 | Tape and Reel | 10000 | $0.0287 |
| NSVMMBT5087LT1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SOT-23-3 | 318-08 | 1 | Tape and Reel | 3000 | $0.044 |
| NSVMMBT5087LT3G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SOT-23-3 | 318-08 | 1 | Tape and Reel | 10000 | $0.044 |
| MMBT5087LT1 | Last Shipments | | SOT-23-3 | 318-08 | 1 | Tape and Reel | 3000 | |
订购产品技术参数
| Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| MMBT5087LT1G | PNP | General Purpose | | 0.05 | 50 | 250 | 800 | 40 | 0.25 |
| MMBT5087LT3G | PNP | General Purpose | | 0.05 | 50 | 250 | 800 | 40 | 0.25 |
| NSVMMBT5087LT1G | PNP | | | 0.05 | 50 | 250 | 800 | 40 | 0.25 |
| NSVMMBT5087LT3G | PNP | | | 0.05 | 50 | 250 | 800 | 40 | 0.25 |
