MMBT5401L: High Voltage PNP Bipolar Transistor

The High Voltage PNP Bipolar Transistor is designed for general purpose switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.

特性
  • These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpiceMMBT5401LT1.LIB (0.0kB)0
Saber modelMMBT5401LT1.SIN (1.0kB)0
Spice 2 modelMMBT5401LT1.SP2 (0.0kB)0
Spice 3 modelMMBT5401LT1.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SOT-23318-08 (33.4kB)AR
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
High Voltage TransistorMMBT5401LT1/D (133kB)13Oct, 2016
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MMBT5401LT1GActiveAEC Qualified Pb-free Halide freeSOT-23-3318-081Tape and Reel3000$0.04
MMBT5401LT3GActiveAEC Qualified Pb-free Halide freeSOT-23-3318-081Tape and Reel10000$0.04
NSVMMBT5401LT3GActiveAEC Qualified PPAP Capable Pb-free Halide freeSOT-23-3318-081Tape and Reel10000$0.044
SMMBT5401LT1GActiveAEC Qualified PPAP Capable Pb-free Halide freeSOT-23-3318-081Tape and Reel3000$0.0496
MMBT5401LT1LifetimeSOT-23-3318-081Tape and Reel3000
MMBT5401LT3ObsoleteSOT-23-3318-081Tape and Reel10000
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MMBT5401LT1GPNPGeneral Purpose0.5150602401000.225
MMBT5401LT3GPNPGeneral Purpose0.5150602401000.225
NSVMMBT5401LT3GPNP0.5150602401000.225
SMMBT5401LT1GPNP0.5150602401000.225
High Voltage Transistor (133kB) MMBT5401L
PSpice MMBT5401L
Saber model MMBT5401L
Spice 2 model MMBT5401L
Spice 3 model MMBT5401L
SOT-23 CM1214A