MMBT5551L: High Voltage NPN Bipolar Transistor

The High Voltage NPN Bipolar Transistor is designed for general purpose switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.

特性
  • Miniature SOT-23 Surface Mount Package Saves Board Space
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice modelMMBT5551LT1.LIB (0.0kB)0
Saber modelMMBT5551LT1.SIN (1.0kB)0
Spice 2 modelMMBT5551LT1.SP2 (0.0kB)0
Spice 3 modelMMBT5551LT1.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SOT-23318-08 (33.4kB)AR
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
High Voltage Transistor NPNMMBT5550LT1/D (177kB)12Oct, 2016
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MMBT5551LT1GActiveAEC Qualified Pb-free Halide freeSOT-23-3318-081Tape and Reel3000$0.04
MMBT5551LT3GActiveAEC Qualified Pb-free Halide freeSOT-23-3318-081Tape and Reel10000$0.04
SMMBT5551LT1GActiveAEC Qualified PPAP Capable Pb-free Halide freeSOT-23-3318-081Tape and Reel3000$0.0513
SMMBT5551LT3GActiveAEC Qualified PPAP Capable Pb-free Halide freeSOT-23-3318-081Tape and Reel10000$0.0513
MMBT5551LT1Last ShipmentsSOT-23-3318-081Tape and Reel3000
MMBT5551LT3Last ShipmentsSOT-23-3318-081Tape and Reel10000
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MMBT5551LT1GNPNGeneral Purpose0.616080250-0.225
MMBT5551LT3GNPNGeneral Purpose0.616080250-0.225
SMMBT5551LT1GNPN0.616080250-0.225
SMMBT5551LT3GNPN0.616080250-0.225
High Voltage Transistor NPN (177kB) MMBT5551L
PSpice model MMBT5551L
Saber model MMBT5551L
Spice 2 model MMBT5551L
Spice 3 model MMBT5551L
SOT-23 CM1214A