MMBTA06WT1: NPN Bipolar Transistor
The NPN Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package, which is designed for low power surface mount applications.
特性- Moisture Sensitivity Level: 1
- ESD Rating: Human Body Model - 4 kVMachine Model - 400 V
- Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
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封装
仿真模型 (4)
封装图纸 (1)
数据表 (1)
Document Title | Document ID/Size | Revision | Revision Date |
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Driver Transistor | MMBTA06WT1/D (105.0kB) | 4 | |
产品订购型号
产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) |
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MMBTA06WT1G | Active | AEC Qualified
Pb-free
Halide free | SC-70-3 / SOT-323-3 | 419-04 | 1 | Tape and Reel | 3000 | $0.0385 |
SMMBTA06WT1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SC-70-3 / SOT-323-3 | 419-04 | 1 | Tape and Reel | 3000 | $0.0453 |
SMMBTA06WT3G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SC-70-3 / SOT-323-3 | 419-04 | 1 | Tape and Reel | 10000 | $0.0423 |
MMBTA06WT1 | Last Shipments | | SC-70-3 / SOT-323-3 | 419-04 | 1 | Tape and Reel | 3000 | |
订购产品技术参数
Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
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MMBTA06WT1G | NPN | General Purpose | | 0.5 | 80 | 100 | - | 100 | 0.15 |
SMMBTA06WT1G | NPN | | | 0.5 | 80 | 100 | - | 100 | 0.15 |
SMMBTA06WT3G | NPN | | | 0.5 | 80 | 100 | - | 100 | 0.15 |