MMBTA42L: High Voltage NPN Bipolar Transistor

This High Voltage NPN Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the SOT-23 package, which is designed for low power surface mount applications.

特性
  • Pb-Free Packages are Available
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelMMBTA42LT1.LIB (0.0kB)0
Saber ModelMMBTA42LT1.SIN (1.0kB)0
Spice 2 ModelMMBTA42LT1.SP2 (0.0kB)0
Spice 3 ModelMMBTA42LT1.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SOT-23318-08 (33.4kB)AR
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
High Voltage Transistor NPNMMBTA42LT1/D (121kB)13Oct, 2016
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MMBTA42LT1GActiveAEC Qualified Pb-free Halide freeSOT-23-3318-081Tape and Reel3000$0.0427
MMBTA42LT3GActiveAEC Qualified Pb-free Halide freeSOT-23-3318-081Tape and Reel10000$0.0427
SMMBTA42LT1GActiveAEC Qualified PPAP Capable Pb-free Halide freeSOT-23-3318-081Tape and Reel3000$0.0513
SMMBTA42LT3GActiveAEC Qualified PPAP Capable Pb-free Halide freeSOT-23-3318-081Tape and Reel10000$0.0513
MMBTA42LT1Last ShipmentsSOT-23-3318-081Tape and Reel3000
MMBTA42LT3Last ShipmentsSOT-23-3318-081Tape and Reel10000
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MMBTA42LT1GNPNGeneral Purpose0.530040-500.225
MMBTA42LT3GNPNGeneral Purpose0.530040-500.225
SMMBTA42LT1GNPN0.530040-500.225
SMMBTA42LT3GNPN0.530040-500.225
High Voltage Transistor NPN (121kB) MMBTA42L
PSpice Model MMBTA42L
Saber Model MMBTA42L
Spice 2 Model MMBTA42L
Spice 3 Model MMBTA42L
SOT-23 CM1214A