MMJT350T1: PNP Bipolar Power Transistor
The Bipolar Power Transistor is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.
特性- High Collector-Emitter Sustaining Voltage-VCEO(sus) = 300 Vdc @ IC= 1.0 mAdc
- Excellent DC Current Gain -hFE = 30–240 @ IC= 50 mAdc
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
- These Devices are PbFree, Halogen Free/BFR Free and are RoHSCompliant
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封装
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MMJT350T1G | Active | AEC Qualified
Pb-free
Halide free | SOT-223-4 / TO-261-4 | 318E-04 | 1 | Tape and Reel | 1000 | $0.2 |
| SMMJT350T1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SOT-223-4 / TO-261-4 | 318E-04 | 1 | Tape and Reel | 1000 | $0.224 |
订购产品技术参数
| Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| MMJT350T1G | PNP | General Purpose | | 0.5 | 300 | 30 | 240 | - | 2.75 |
| SMMJT350T1G | PNP | | | 0.5 | 300 | 30 | 240 | - | 2.75 |
