MSB1218A-RT1: PNP Bipolar Transistor

This PNP Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package, which is designed for low power surface mount applications.

特性
  • High hFE, 210-460
  • Low VCE(sat), < 0.5 V
  • Available in 8 mm, 7-inch/3000 Unit Tape and Reel
  • Pb-Free Package is Available
封装
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
PNP Silicon General Purpose Amplifier TransistorMSB1218A-RT1/D (117.0kB)7
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SC-70 (SOT-323) 3 LEAD419-04 (61.1kB)N
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MSB1218A-RT1GActiveAEC Qualified Pb-free Halide freeSC-70-3 / SOT-323-3419-041Tape and Reel3000$0.0247
NSVMSB1218A-RT1GActiveAEC Qualified PPAP Capable Pb-free Halide freeSC-70-3 / SOT-323-3419-041Tape and Reel3000$0.0293
MSB1218A-RT1Last ShipmentsSC-70-3 / SOT-323-3419-041Tape and Reel3000
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MSB1218A-RT1GPNPGeneral Purpose0.145210340-0.15
NSVMSB1218A-RT1GPNP0.1452103400.15
PNP Silicon General Purpose Amplifier Transistor (117.0kB) MSB1218A-RT1
SC-70 (SOT-323) 3 LEAD ESD7002