MSD1819A-R: NPN Bipolar Transistor

This NPN Bipolar Amplifier Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.

特性
  • High hFE, 210-460
  • Low VCE(sat), < 0.5 V
  • Available in 8 mm, 7-inch/3000 Unit Tape and Reel
  • Moisture Sensitivity Level 1
  • ESD Protection: Human Body Model > 4000 V ESD Protection: Machine Model > 400 V
  • Pb-Free Package is Available
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice Model LIB FileMSD1819A-RT1G.LIB0Feb, 2012
Saber Model SIN FileMSD1819A-RT1G.SIN (1kB)0Feb, 2012
Spice2 Model SP2 FileMSD1819A-RT1G.SP20Feb, 2012
Spice3 Models SP3 FileMSD1819A-RT1G.SP30Feb, 2012
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SC-70 (SOT-323) 3 LEAD419-04 (61.1kB)N
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
General Purpose Amplifier TransistorMSD1819A-RT1/D (57kB)10
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MSD1819A-RT1GActiveAEC Qualified Pb-free Halide freeSC-70-3 / SOT-323-3419-041Tape and Reel3000联系BDTIC
NSVMSD1819A-RT1GActiveAEC Qualified PPAP Capable Pb-free Halide freeSC-70-3 / SOT-323-3419-041Tape and Reel3000$0.0272
MSD1819A-RT1ObsoleteSC-70-3 / SOT-323-3419-041Tape and Reel3000
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MSD1819A-RT1GNPNGeneral Purpose0.50.150210340-0.15
NSVMSD1819A-RT1GNPNGeneral Purpose0.50.150210340-0.15
General Purpose Amplifier Transistor (57kB) MSD1819A-R
PSpice Model LIB File MSD1819A-R
Saber Model SIN File MSD1819A-R
Spice2 Model SP2 File MSD1819A-R
Spice3 Models SP3 File MSD1819A-R
SC-70 (SOT-323) 3 LEAD ESD7002