MSD601-R: NPN Bipolar Transistor

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SC-59 package, which is designed for lower power surface mount applications.

特性
  • High hFE, 210-460
  • Low VCE(sat), < 0.5 V
  • Available in 8 mm, 7-inch/3000 Unit Tape and Reel
  • Pb-Free Packages are Available
封装
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
General Purpose Amplifier Transistor NPNMSD601-RT1/D (79.0kB)9
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SC-59 3 LEAD318D-04 (55.1kB)H
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MSD601-RT1GActiveAEC Qualified Pb-free Halide freeSC-59-3318D-041Tape and Reel3000$0.042
NSVMSD601-RT1GActiveAEC Qualified PPAP Capable Pb-free Halide freeSC-59-3318D-041Tape and Reel3000$0.0463
MSD601-RT1Last ShipmentsSC-59-3318D-041Tape and Reel3000
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MSD601-RT1GNPNGeneral Purpose0.150210340-0.2
NSVMSD601-RT1GNPN0.150210340-0.2
General Purpose Amplifier Transistor NPN (79.0kB) MSD601-R
SC-59 3 LEAD M1MA152WK