MSD602-RT1: NPN Bipolar Transistor

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SC-59 package, which is designed for lower power surface mount applications.

特性
  • High hFE, 120-240
  • Low VCE(sat), < 0.6 V
  • Available in 8 mm, 7-inch/3000 Unit Tape and Reel
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
LIB Model for SMSD602RT1Gsmsd602rt1g_rev0.lib0Jun, 2014
SIN Model for SMSD602RT1Gsmsd602rt1g_rev0.sin (1kB)0Jun, 2014
SP3 Model for SMSD602RT1Gsmsd602rt1g_rev0.sp30Jun, 2014
SP@ Model for SMSD602RT1Gsmsd602rt1g_rev0.sp20Jun, 2014
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SC-59 3 LEAD318D-04 (55.1kB)H
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
General Purpose NPN Amplifier TransistorMSD602-RT1/D (58kB)10
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MSD602-RT1GActiveAEC Qualified Pb-free Halide freeSC-59-3318D-041Tape and Reel3000$0.042
SMSD602-RT1GActiveAEC Qualified PPAP Capable Pb-free Halide freeSC-59-3318D-041Tape and Reel3000$0.0463
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MSD602-RT1GNPNGeneral Purpose0.550120240-0.2
SMSD602-RT1GNPN0.550120240-0.2
General Purpose NPN Amplifier Transistor (58kB) MSD602-RT1
LIB Model for SMSD602RT1G MSD602-RT1
SIN Model for SMSD602RT1G MSD602-RT1
SP3 Model for SMSD602RT1G MSD602-RT1
SP@ Model for SMSD602RT1G MSD602-RT1
SC-59 3 LEAD M1MA152WK