The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SC-59 package, which is designed for lower power surface mount applications.
特性
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Document Title | Document ID/Size | Revision | Revision Date |
---|---|---|---|
LIB Model for SMSD602RT1G | smsd602rt1g_rev0.lib | 0 | Jun, 2014 |
SIN Model for SMSD602RT1G | smsd602rt1g_rev0.sin (1kB) | 0 | Jun, 2014 |
SP3 Model for SMSD602RT1G | smsd602rt1g_rev0.sp3 | 0 | Jun, 2014 |
SP@ Model for SMSD602RT1G | smsd602rt1g_rev0.sp2 | 0 | Jun, 2014 |
Document Title | Document ID/Size | Revision |
---|---|---|
SC-59 3 LEAD | 318D-04 (55.1kB) | H |
Document Title | Document ID/Size | Revision | Revision Date |
---|---|---|---|
General Purpose NPN Amplifier Transistor | MSD602-RT1/D (58kB) | 10 |
产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) | ||
---|---|---|---|---|---|---|---|---|
MSD602-RT1G | Active | AEC Qualified Pb-free Halide free | SC-59-3 | 318D-04 | 1 | Tape and Reel | 3000 | $0.042 |
SMSD602-RT1G | Active | AEC Qualified PPAP Capable Pb-free Halide free | SC-59-3 | 318D-04 | 1 | Tape and Reel | 3000 | $0.0463 |
Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
---|---|---|---|---|---|---|---|---|---|
MSD602-RT1G | NPN | General Purpose | 0.5 | 50 | 120 | 240 | - | 0.2 | |
SMSD602-RT1G | NPN | 0.5 | 50 | 120 | 240 | - | 0.2 |