MUN5113DW1: Dual PNP Bipolar Digital Transistor (BRT)
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
特性- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
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应用注释 (1)
数据表 (1)
仿真模型 (4)
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MUN5113DW1T1G | Active | AEC Qualified
Pb-free
Halide free | SC-88-6 / SC-70-6 / SOT-363-6 | 419B-02 | 1 | Tape and Reel | 3000 | $0.0641 |
| NSVMUN5113DW1T3G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SC-88-6 / SC-70-6 / SOT-363-6 | 419B-02 | 1 | Tape and Reel | 10000 | $0.0713 |
| SMUN5113DW1T1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SC-88-6 / SC-70-6 / SOT-363-6 | 419B-02 | 1 | Tape and Reel | 3000 | $0.0713 |
订购产品技术参数
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | R1 (kΩ) | R2 (kΩ) | R1/R2 Typ | Vi(off) Max (V) | Vi(on) Min (V) |
|---|
| MUN5113DW1T1G | Dual PNP | 0.1 | 50 | 80 | 47 | 47 | 1 | 0.8 | 3 |
| NSVMUN5113DW1T3G | Dual PNP | 0.1 | 50 | 80 | 47 | 47 | 1 | 0.8 | 3 |
| SMUN5113DW1T1G | Dual PNP | 0.1 | 50 | 80 | 47 | 47 | 1 | 0.8 | 3 |
